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Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates |
| ZHU Pei-ran1;S. Yamamoto2;A. Miyashita2;H. Naramoto2 |
| 1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Department of Materials Development, Japan Atom Energy Research Institute, Watanuki 1233, Takasaki, Gumma 370-12, Japan
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| Cite this article: |
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ZHU Pei-ran, S. Yamamoto, A. Miyashita et al 1998 Chin. Phys. Lett. 15 904-906 |
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Abstract Thin films of VO2 single-crystalline on (0001) sapphire substrates have been prepared by visible pulsed laser ablation technique. The crystal quality and properties of the films are evaluated through electrical resistance measurement, x-ray diffraction (XRD), and Rutherford- backscattering spectroscopy/channeling (RBS/C) analysis. The dependence of the surface electrical resistance of the films on the temperature shows semiconductor-to-metal transitions with the resistance change of 7x103-2 x 104. The hysteresis widths are from less than 1 to 3 K . XRD and RBS/C data reveal that the films prepared in particular conditions are single-crystalline VO2 with the (010) planes parallel to the surface of the sapphire substrate.
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| Keywords:
61.85. +p
81.15.Fg
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Published: 01 December 1998
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