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Growth of Oriented Heteroepitaxial Diamond Films on Si(100) via Electron Emission in Hot Filament Chemical Vapor Deposition |
| WANG Wan-lu;LIAO Ke-jun;FENG Bin;ZHANG Zhi |
| Department of Applied Physics, Chongqing University, Chongqing 400044 |
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| Cite this article: |
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WANG Wan-lu, LIAO Ke-jun, FENG Bin et al 1998 Chin. Phys. Lett. 15 460-462 |
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Abstract The oriented heteroepitaxial diamond films were obtained on Si(100) substrate via electron emission in hot filament chemical vapor deposition with the orientation relationship of diamond < 100 >//Si< 100 > and < 110 > //Si< 110 >. The nucleation and subsequent growth of diamond films were characterized by scanning electron microscopy and Raman spectroscopy. The experimental results showed that the electron emission from the diamond coating on the electrode played a critical role during the nucleation due to excition plasma. The maximum value of nucleation density was up to 1011cm-2 on pristine Si surface at emission current of 250mA. The effect of the electron emission on the reactive gas composition was analyzed by in situ infrared absorption, indicating that the concentration of CH4 and C2H2 near the substrate surface was extremely increased. This may be responsible for the enhanced nucleation by electron emission.
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81.15.Kk
81.15.-z
68.55.Jk
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Published: 01 June 1998
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| PACS: |
81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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68.55.Jk
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