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Characterization of Magnetron Sputter CNx Thin Films |
| ZHENG Wei-tao1,2;J. E. Sundgren2 |
| 1Department of Materials Science, Jilin University, Changchun 130023
2Department of Physics, Linkoping University, S-581 83 Linkoping, Sweden
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| Cite this article: |
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ZHENG Wei-tao, J. E. Sundgren 1998 Chin. Phys. Lett. 15 120-122 |
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Abstract Carbon nitride thin films were deposited at different substrate temperature (ST) by using reactive magnetron sputtering in a pure N2 discharge, and studied by laser Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometer. The Raman spectra of the films show that I(D)/I(G) decreased with the increase of ST. The D bandposition shifted towards lower frequency, while the G bandposition shifted towards higher frequency as the ST increased. The XPS data exhibit that Nls binding states also depend on ST. The optical band gap of the films is found dropped from 0.22eV to 0.10eV with the increase of ST.
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| Keywords:
68.55.Nq
81.15.-z
82.80.PV
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Published: 01 February 1998
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| PACS: |
68.55.Nq
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(Composition and phase identification)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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