Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation

Chin. Phys. Lett.

1999, Vol. 16

Issue (10): 745-746 DOI:

Original Articles

Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation

HE Jing-tang;LÜ Yu-sheng;CHEN Duan-bao;LI Zu-hao;BIAN Jian-guo;ZHU Guo-yi;TANG Xiao-wei;CHEN Gang¹;ZHENG Lian-rong¹;CHEN Xiao-hong¹;REN Shao-xia¹

Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 ¹Beijing Inorganic Crystal Laboratory, Beijing Glass Research Institute, Beijing 100062

Cite this article:

HE Jing-tang, LÜ, Yu-sheng et al 1999 Chin. Phys. Lett. 16 745-746

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Abstract Loss of light yield of doped lead tungstate crystals after irradiation with a low dose rate has been observed. The La, Pr, and Y doping may improve radiation hardness, whereas Bi or Mo doping is harmful.

Keywords: 61.80.Ed 07.85.Fv

Published: 01 October 1999

PACS:	61.80.Ed	(γ-ray effects)
	07.85.Fv	(X- and γ-ray sources, mirrors, gratings, and detectors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I10/0745

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	HE Jing-tang
	LÜ
	Yu-sheng
	CHEN Duan-bao
	LI Zu-hao
	BIAN Jian-guo
	ZHU Guo-yi
	TANG Xiao-wei
	CHEN Gang
	ZHENG Lian-rong
	CHEN Xiao-hong
	REN Shao-xia

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