Quantum Confinement in InSb Microcrystallites Embedded in SiO<suB>2</suB> Thin Films

Chin. Phys. Lett.

1998, Vol. 15

Issue (2): 143-145 DOI:

Original Articles

Quantum Confinement in InSb Microcrystallites Embedded in SiO₂ Thin Films

ZHU Kai-gui;SHI Jian-zhong;ZHANG Li-de

Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031

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ZHU Kai-gui, SHI Jian-zhong, ZHANG Li-de 1998 Chin. Phys. Lett. 15 143-145

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Abstract Semiconductor InSb microcrystallites were embedded in SiO₂ thin films by rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Average size of the microcrystallites, depending on post-annealing temperature and time, is on the order of magnitude of nanometer. Absorption spectra of the films were measured and large blue shifts of absorption edge were observed in a wide range from 300 to 1500nm. The blue shifts were attributed to the quantum confinement effect and explained in the model of effective-mass approximation.

Keywords: 81.15.Cd 61.46.+w 78.66.Jg

Published: 01 February 1998

PACS:	81.15.Cd	(Deposition by sputtering)
	61.46.+w
	78.66.Jg	(Amorphous semiconductors; glasses)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I2/0143

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