Chin. Phys. Lett.  1998, Vol. 15 Issue (2): 146-148    DOI:
Original Articles |
Investigation of Diamond Films Deposited on LaAIO3 Single Crystal Substrates by Hot Filament Chemical Vapor Deposition
SHANG Nai-gui1;FANG Rong-chuan1;HANG Yin3;LI Jin-qiu1;HAN Si-jin1;SHAO Qing-yi1;CUI Jing-biao1,2;XU Cun-yi2
1Department of Physics, 2Structure Research Laboratory, University of Science and Technology of China, Hefei 230026 3Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230026
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SHANG Nai-gui, FANG Rong-chuan, HANG Yin et al  1998 Chin. Phys. Lett. 15 146-148
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Abstract Diamond nucleation and growth on a LaAIO3 single crystal substrate, whose lattice mismatch with diamond is only 7.2% at high temperature, were investigated for the first time. As an insulating substrate, a nucleation density of more than 108 cm-2 was achieved on ultrasonically cleaned wafers. A free-standing diamond film was obtained for 65 h growth and characterized by scanning electron microscopy, Raman and x-ray photoelectron spectroscopy. The results show that LaAIO3 single crystal is a good candidate substrate for diamond film growth.
Keywords: 81.15.Gh      81.60.Cp      68.35.Dv     
Published: 01 February 1998
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.60.Cp  
  68.35.Dv (Composition, segregation; defects and impurities)  
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SHANG Nai-gui
FANG Rong-chuan
HANG Yin
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SHAO Qing-yi
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XU Cun-yi
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