Abnormal Alignment of Misfit Dislocations in
In0.52Al0.48As/InxGa1-xAs/In0.52AI0.48As/InP Heterostructure

Chin. Phys. Lett.

1998, Vol. 15

Issue (1): 50-51 DOI:

Original Articles

Abnormal Alignment of Misfit Dislocations in In_0.52Al_0.48As/In_xGa_1-xAs/In_0.52AI_0.48As/InP Heterostructure

WU JU^1,2;LI Han-xuan¹;WANG Zhan-guo¹

¹Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ²also Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080

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WU JU, LI Han-xuan, WANG Zhan-guo 1998 Chin. Phys. Lett. 15 50-51

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Abstract It was observed with transmission electron microscopy in the In_0.52Al_0.48As/In_xGa_1-xAs/In_0.52AI_0.48As/InP heterostructure that misfit dislocation lines deviate from the <110> directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.

Keywords: 61.72.Ff 68.55.Jk

Published: 01 January 1998

PACS:	61.72.Ff	(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
	68.55.Jk

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I1/050

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