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Vertical Transport in GaAs/AlAs Superlattice with Weak Coupling Between Wells |
| HE Li-xiong;SUN Bao-quan;WU Jian-qing |
| National Laboratory for Semiconductor Superlattice and Microstructures, Beijing 100083,
and Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002(mailing address)
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| Cite this article: |
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HE Li-xiong, SUN Bao-quan, WU Jian-qing 1998 Chin. Phys. Lett. 15 293-295 |
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Abstract Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic method. Spontaneous current oscillations are also investigated. The domain formation time 70 ± 30 ns is directly measured. By using discrete-tunneling model, the key parameters of the relation between tunneling current and the bias between adjacent wells were quantitatively determined from the experimental data.
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| Keywords:
72.20.Ht
73.40.Lq
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Published: 01 April 1998
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| PACS: |
72.20.Ht
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(High-field and nonlinear effects)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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