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Magnetoresistance and Interlayer Exchange Coupling in Ferromagnetic/Nonmagnetic/Insulator (Semiconductor) /Ferromagnetic Tunnel Junctions |
| ZHANG Wu-shou;LI Bo-zang |
| Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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ZHANG Wu-shou, LI Bo-zang 1998 Chin. Phys. Lett. 15 296-298 |
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Abstract Based on the two-band model and free-electron approximation, a treatment of the magnetoresistance (MR) and interlayer exchange coupling (IEC) for ferromagnetic/nonmagnetic/insulator (semiconductor)/ferromagnetic tunnel junctions is presented. It is found that properties of the junctions are intermediate between tunnel junctions and metallic magnetic multilayers. The MR and IEC are all the oscillatory functions of the thickness of nonmagnetic layer. The results have potential in designing spin-polarized tunneling devices with large field-sensitivity.
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75.70.-i
73.50.Jt
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Published: 01 April 1998
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| PACS: |
75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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73.50.Jt
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(Galvanomagnetic and other magnetotransport effects)
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