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InAsP/InGaAsP Strained Microstructures Grown by Gas Source Molecular Beam Epitaxy |
| CHEN Yi-Qiao;CHEN Jian-Xin;ZHANG Yong-Gang;LI Ai-Zhen;K. Fröjdh*;B. Stotz* |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
*Ericsson Components AB, Microelectronics Division, Opto Electronic Products, Isafiordsgatan 16, KISTA, SE-16481 KISTA-STOCKHOLM, Sweden
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| Cite this article: |
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CHEN Yi-Qiao, CHEN Jian-Xin, ZHANG Yong-Gang et al 2000 Chin. Phys. Lett. 17 435-437 |
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Abstract Device quality InAsP/InGaAsP strained multiquantum-well (MQW) structures are successfully grown by using gas source molecular beam epitaxy method. The grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction, room temperature photoluminescence measurements, confirming that optimum growth condition and high quality material have been obtained for device application. The grown laser structures are processed into ridge waveguide lasers. A threshold current as low as 16mA at 25°C for 300µm long device has been obtained. Temperature-dependent light-current measurement shows a characteristic temperature of 75 K.
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| Keywords:
68.65.+g
42.55.Px
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Published: 01 June 2000
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