| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Realizing n-Type GeTe through Suppressing the Formation of Cation Vacancies and Bi-Doping |
| Min Zhang , Chaoliang Hu , Qi Zhang , Feng Liu , Shen Han , Chenguang Fu , and Tiejun Zhu* |
| School of Materials Science and Engineering, and State Key Laboratory of Silicon Materials, Zhejiang University, Zhejiang 310027, China |
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| Cite this article: |
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Min Zhang, Chaoliang Hu, Qi Zhang et al 2021 Chin. Phys. Lett. 38 127201 |
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Abstract It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration of about $10^{21}$ cm$^{-3}$. In the present work, the formation energy of cation vacancies of GeTe is increased through alloying PbSe, and further Bi-doping enables the change of carrier conduction from p-type to n-type. As a result, the n-type thermoelectric performance is obtained in GeTe-based materials. A peak $zT$ of 0.34 at 525 K is obtained for (Ge$_{0.6}$Pb$_{0.4})_{0.88}$Bi$_{0.12}$Te$_{0.6}$Se$_{0.4}$. These results highlight the realization of n-type doping in GeTe and pave the way for further optimization of the thermoelectric performance of n-type GeTe.
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Received: 28 August 2021
Published: 18 November 2021
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| PACS: |
81.05.Hd
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(Other semiconductors)
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84.60.Rb
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(Thermoelectric, electrogasdynamic and other direct energy conversion)
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72.20.Pa
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(Thermoelectric and thermomagnetic effects)
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61.72.jd
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(Vacancies)
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| Fund: Supported by the National Science Fund for Distinguished Young Scholars (Grant No. 51725102), and the National Natural Science Foundation of China (Grant No. 51861145305). |
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