中国物理快报  2017, Vol. 34 Issue (12): 127101-    DOI: 10.1088/0256-307X/34/12/127101
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Electronic Properties of Defects Induced by H Irradiation in Tantalum Phosphide
Wei Cheng1,2,3, Yan-Long Fu1,2, Min-Ju Ying1,2, Feng-Shou Zhang1,2,4**
1Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875
2Beijing Radiation center, Beijing 100875
3Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201
4Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Accelerator of Lanzhou, Lanzhou 730000