Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As
LI Hang, ZHANG Xin-Hui**
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：We present a quantitative evaluation study of the thermal effect responsible for laser-triggered collective magnetization dynamics in a ferromagnetic (Ga,Mn)As film without applying the external magnetic field by employing the pump-probe magneto-optical spectroscopy. Our observation shows that the effect of ultrafast laser heating on the manipulation of magnetization precession in a (Ga,Mn)As film is not exactly equivalent to that of the ambient temperature increase, and needs to be carefully analyzed by considering the temperature-dependent specific heat of (Ga,Mn)As. The transient modulation of magnetocrystalline anisotropy via ultrafast laser heating at low temperature exhibits a higher sensitivity than that at high temperature. The quantitative analysis of the laser-heating manipulated magnetization precession presented in this work is helpful for evaluating the laser-triggered ultrafast magnetization dynamics in (Ga,Mn)As films.
收稿日期: 2015-01-12
出版日期: 2015-06-30
:
75.50.Pp
(Magnetic semiconductors)
75.78.Jp
(Ultrafast magnetization dynamics and switching)
78.47.jd
(Time resolved luminescence)
78.47.D-
(Time resolved spectroscopy (>1 psec))
[1] Kirilyuk A, Kimel A V and Rasing T 2010 Rev. Mod. Phys. 82 2731 1998 Science 281 951 2010 Nat. Mater. 9 965 Acta Phys. Sin. 60 027105 (in Chinese)2006 Rev. Mod. Phys. 78 809 2014 Chin. Phys. B 23 077801 2011 Chin. Phys. Lett. 28 097101 Spin Dynamics in Confined Magnetic Structures I (Berlin: Springer)2005 J. Supercond. 18 9 2008 Phys. Rev. Lett. 100 067202 2012 Nat. Phys. 8 411 2007 Appl. Phys. Lett. 91 112506 2009 Phys. Rev. B 79 085304 2009 Phys. Rev. B 80 155203 2007 Phys. Rev. B 76 035327 2006 J. Phys.: Condens. Matter 18 R501 1996 Phys. Rev. Lett. 76 4250 2002 Phys. Rev. Lett. 89 017401 2007 Nat. Mater. 6 740 2009 Nat. Mater. 8 56 2007 Phys. Rev. Lett. 98 217401 2005 Phys. Rev. Lett. 94 227203 2012 Appl. Phys. Lett. 100 102403 2008 Appl. Phys. Lett. 92 122507 2011 Phys. Rev. B 84 214432 2010 Phys. Rev. Lett. 105 117204 2013 Phys. Rev. B 87 060302(R) 2003 Phys. Rev. B 67 205204 2013 Nat. Photon. 7 492 1982 J. Appl. Phys. 53 R123 1975 J. Appl. Phys. 46 250 1993 IEEE J. Quantum Electron. 29 2306 2000 J. Appl. Phys. 88 6026 1996 Appl. Phys. Lett. 69 1465 1996 Appl. Phys. Lett. 69 2566 2003 J. Phys.: Condens. Matter 15 S723 2005 Phys. Rev. B 71 035307 2007 Phys. Rev. B 75 233308 2002 Phys. Rev. Lett. 88 227201 2008 Phys. Rev. B 77 085321 2008 Phys. Rev. B 77 184428 2009 Phys. Rev. Lett. 102 057203 2012 J. Nanosci. Nanotechnol. 12 7477 2015 arXiv:1501.02083 [cond-mat.mes-hall] 2003 Phys. Rev. Lett. 90 167206 2006 Phys. Rev. B 74 045201 2008 Phys. Rev. B 77 235308
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.
[2]
.
[3]
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[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2015, Vol. 32 
