LI Shi-Guo1**, GONG Qian2, CAO Chun-Fang2, WANG Xin-Zhong1, WANG Rui-Chun1, YUE Li2, LIU Qing-Bo2, WANG Hai-Long3
1Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, 1068 West Nigang road, Shenzhen 518029 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3 College of Physics and Engineering, Qufu Normal University, Qufu 273165
Multicolor InAs/InP(100) Quantum Dot Laser
LI Shi-Guo1**, GONG Qian2, CAO Chun-Fang2, WANG Xin-Zhong1, WANG Rui-Chun1, YUE Li2, LIU Qing-Bo2, WANG Hai-Long3
1Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, 1068 West Nigang road, Shenzhen 518029 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3 College of Physics and Engineering, Qufu Normal University, Qufu 273165
摘要We report on a three-colour InAs/InP(100) quantum dot laser under continuous wave mode at an operation temperature of 20 °C. Three lasing peaks are observed simultaneously, the high-energy peak undergoes continuous blueshift, while the splitting energy gap between the low-energy peaks is somewhat fixed as the injection current increases. The maximum output power from one facet without coating is more than 34 mW with a slope efficiency of 102 mW/A just above the threshold current. Three peaks of differential efficiency of output power are observed, just corresponding to each peak in lasing spectra, respectively. At the same time, the far-field distribution shows only a single transverse mode over the full range of injection current.
Abstract：We report on a three-colour InAs/InP(100) quantum dot laser under continuous wave mode at an operation temperature of 20 °C. Three lasing peaks are observed simultaneously, the high-energy peak undergoes continuous blueshift, while the splitting energy gap between the low-energy peaks is somewhat fixed as the injection current increases. The maximum output power from one facet without coating is more than 34 mW with a slope efficiency of 102 mW/A just above the threshold current. Three peaks of differential efficiency of output power are observed, just corresponding to each peak in lasing spectra, respectively. At the same time, the far-field distribution shows only a single transverse mode over the full range of injection current.
[1] Akiyama T, Hatori N, Nakata Y, Ebe H and Sugawara M 2002 IEEE Electron. Lett. 38 1139
[2] Liu H C, Liew S L, Badcock T, Mowbray D J, Skolinick M S, Ray S K, Choi T L, Groom K M, Stevens B, Hasbullah F, Jin C Y, Hopkinson M and Hogg R A 2006 Appl. Phys. Lett. 89 073113
[3] Lelarge F, Rousseau B, Dagens B, Poingt F, Pommereau F, and Accard A 2005 IEEE Photon. Technol. Lett. 17 1369
[4] Anantathanasarn S, NÖtzel R, van veldhoven P J, van otten F W M, Barbarin Y, Servanton G, de vries T, Smalbrugge E, Geluk E J, Eijkemans T J, Bente E A J M, Oei Y S, Smit M K and Wolter J H 2006 Appl. Phys. Lett. 89 073115
[5] Li S G, Gong Q, Lao Y F, He K, Li J, Zhang Y G, Feng S L and Wang H L 2008 Appl. Phys. Lett. 93 111109
[6] Kim H D, Joeng W G, Lee J H, Yim J S, Lee D, Stevenson R, Dapkus P D, Jang J W and Pyun S H 2005 Appl. Phys. Lett. 87 083110
[7] Alghoraibi I, Rohel T, Piron R, Bertru N, Paranthoen C, Elias G, Nakkar A, Folliot H, Le corre A and Loualiche S 2007 Appl. Phys. Lett. 91 261105
[8] Lee C S, Guo W, Basu D and Bhattacharya P 2010 Appl. Phys. Lett. 96 101107
[9] Deubert S, Debusmann R, Reithmaier J P and Forchel A 2005 IEEE Electron. Lett. 41 1125
[10] Kotain J, van Veldhoven P J, de Vries T, Smalbrugge B, Bente E A J M, Smit M K and NÖtzel R 2009 IEEE Electron. Lett. 45 1317
[11] Liu J R, Lu Z G, Raymond S, Poole P J, Barrios P J and Poitras D 2008 Opt. Lett. 33 1702
[12] Li S G, Gong Q, Lao Y F, Yang H D, Gao S, Chen P, Zhang Y G, Fen S L G and Wang H L 2009 Appl. Phys. Lett. 95 251111
[13] Charis M, Christos S, Hercules S, Spiros M, Igor K and Dimitris S 2010 Appl. Phys. Lett. 96 211110
[14] Hadass D, Alizon R, Dery H, Mikhelashvili V, Eisenstein G, Schwertberger R, Somers A, Reithmaier J P, Forchel A, Calligaro M, Bansropun S and Krakowski M 2004 Appl. Phys. Lett. 85 5505
[15] Kamada H, Gotoh H, Temmyo J, Takagahara T and Ando H 2001 Phys. Rev. Lett. 87 246401
2011, Vol. 28 
