摘要Exciton quenching dynamics in a polymer PVK doped with FirPic, Ir(piq)2(acac) and Ir(ppy)3 phosphorescent guest materials, respectively, due to the presence of metal films is analyzed using time−resolved photoluminescence. The quenching is directly governed by radiationless energy transfer to the metal and is further enhanced by diffusion of excitons into the depletion region of the exciton population at the polymer/metal interface. The influence of polymer layer thickness on the luminescence decay is described by a one-dimensional diffusion model. The energy transfer distance and exciton diffusion length are 10 nm, 9 nm, 15 nm and 29.3 nm, 30.1 nm, 30.9 nm for PVK doped with phosphorescent guest materials FirPic, Ir(piq)2(acac) and Ir(ppy)3, respectively. This can disentangle the contributions from direct energy transfer to the metal and exciton migration to the exciton quenching process. The lengths of the exciton quenching region of the three doping systems are 39.3 nm, 39.1 nm and 45.9 nm, respectively.
Abstract：Exciton quenching dynamics in a polymer PVK doped with FirPic, Ir(piq)2(acac) and Ir(ppy)3 phosphorescent guest materials, respectively, due to the presence of metal films is analyzed using time−resolved photoluminescence. The quenching is directly governed by radiationless energy transfer to the metal and is further enhanced by diffusion of excitons into the depletion region of the exciton population at the polymer/metal interface. The influence of polymer layer thickness on the luminescence decay is described by a one-dimensional diffusion model. The energy transfer distance and exciton diffusion length are 10 nm, 9 nm, 15 nm and 29.3 nm, 30.1 nm, 30.9 nm for PVK doped with phosphorescent guest materials FirPic, Ir(piq)2(acac) and Ir(ppy)3, respectively. This can disentangle the contributions from direct energy transfer to the metal and exciton migration to the exciton quenching process. The lengths of the exciton quenching region of the three doping systems are 39.3 nm, 39.1 nm and 45.9 nm, respectively.
YANG Shao-Peng**;HUANG Da;GE Da-Yong;LIU Bo-Ya;WANG Li-Shun;FU Guang-Sheng
. Dynamics of Exciton Diffusion in PVK:Phosphorescent Materials/Al Hetero-Structures[J]. 中国物理快报, 2011, 28(8): 87101-087101.
YANG Shao-Peng**, HUANG Da, GE Da-Yong, LIU Bo-Ya, WANG Li-Shun, FU Guang-Sheng
. Dynamics of Exciton Diffusion in PVK:Phosphorescent Materials/Al Hetero-Structures. Chin. Phys. Lett., 2011, 28(8): 87101-087101.
[1] Gustafsson G, Cao Y, Treacy G M, Klavetter F, Colaneri N and Heeger A J 1992 Nature 357 477
[2] Aratani S, Zhang C, Pakbaz K, Hoger S, Wudl F and Heeger A J 1993 Electron. J. Mater. 22 745
[3] Burroughes J H, Bradley D D C, Brown A R, Marks R N, Mackay K, Friend R H, Burns P L and Holmes A B 1990 Nature 347 539
[4] Niu X D, Ma L, Yao B, Ding J Q, Tu G L, Xie Z Y and Wang L X 2006 Appl. Phys. Lett. 89 213508
[5] Burroughes J H, Bradley D D C, Brown A R, Marks R N, Mackay K, Friend R H, Burns P L and Holmes A B 1990 Nature 347 539
[6] Greenham N C, Moratti S C, Bradley D D C, Friend R H and Holmes A B 1993 Nature 365 628
[7] Peumans P, Bulovic V and Forrest S R 2000 Appl. Phys. Lett. 76 2650
[8] Becker H, Burns S E and Friend R H 1997 Phys. Rev. B 56 1893
[9] Markov D E, Tanase C, Blom P W M and Wildeman J 2005 Phys. Rev. B 72 045217
[10] Markov D E and Blom P W M 2005 Appl. Phys. Lett. 87 233511
[11] Markov D E, J C Hunnelen and Blom P W M 2005 Phys. Rev. B 72 045216
[12] Markov D E and Blom P W M 2006 Phys. Rev. B 74 085206
[13] Markov D E and Blom P W M 2005 Phys. Rev. B 72 161401
[14] Yang S P, Li C L, Fan S S, Li X W and Fu G S 2007 Photogr. Sci. Photochem. 25 364 (in Chinese)
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