摘要The temperature-dependent photoluminescence behaviour of chemical vapour transport (CVT)-grown ZnSe crystal is investigated. A new emission band appears when temperature is reduced to 155K. It is shown that the new emission band is strongly related to defect emission peaked at around 2.1eV. The emergence of the new emission band is accompanied by decreasing emission intensity of free exciton, as well as redshift of defect emission with temperature decreases. The activated energy of the defect state is estimated to be 60.6meV, which is approximately equal to the energy difference between the new emission and the free exciton emission at 155K.
Abstract：The temperature-dependent photoluminescence behaviour of chemical vapour transport (CVT)-grown ZnSe crystal is investigated. A new emission band appears when temperature is reduced to 155K. It is shown that the new emission band is strongly related to defect emission peaked at around 2.1eV. The emergence of the new emission band is accompanied by decreasing emission intensity of free exciton, as well as redshift of defect emission with temperature decreases. The activated energy of the defect state is estimated to be 60.6meV, which is approximately equal to the energy difference between the new emission and the free exciton emission at 155K.
(Optical properties of bulk materials and thin films)
引用本文:
SHU Shi-Wei;MA Guo-Hong. Temperature-Dependent Defect-Induced New Emission in ZnSe Crystal[J]. 中国物理快报, 2009, 26(4): 47102-047102.
SHU Shi-Wei, MA Guo-Hong. Temperature-Dependent Defect-Induced New Emission in ZnSe Crystal. Chin. Phys. Lett., 2009, 26(4): 47102-047102.
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