摘要The mechanical properties of Si-doped (111) GaAs crystal for solar cells are investigated by means of a microindentation technique. Vickers' microhardness Hv exhibits a nonlinear relationship with the applied load. In the range of 0.1–1 kg, Hv is decreased from 5.59 GPa to 5.03 GPa. Such a phenomenon is explained on the basis of indenter penetration. The Hv value can effectively be presumed by Kick's law, and Meyer's index n is calculated to be 1.90. For the fracture toughness Kc of the GaAs crystal, it also displays nonlinear behavior related to the applied load, which is caused by energy dissipation during the development process of cracks on the wafer.
Abstract：The mechanical properties of Si-doped (111) GaAs crystal for solar cells are investigated by means of a microindentation technique. Vickers' microhardness Hv exhibits a nonlinear relationship with the applied load. In the range of 0.1–1 kg, Hv is decreased from 5.59 GPa to 5.03 GPa. Such a phenomenon is explained on the basis of indenter penetration. The Hv value can effectively be presumed by Kick's law, and Meyer's index n is calculated to be 1.90. For the fracture toughness Kc of the GaAs crystal, it also displays nonlinear behavior related to the applied load, which is caused by energy dissipation during the development process of cracks on the wafer.
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