Au5Si2/Si Heterojunction Nanowires Formed by Combining SiO Evaporation with Vapour--Liquid--Solid Mechanism
PAN Guo-Wei1, YING Guo-Liang2, YONG Ben-Shou1, WAN Yu-Ting1, ZENG Yue-Wu3, SU Zi-Xue1
1Department of Physics, Zhejiang University, Hangzhou 3100272Information Technology Center, Taizhou College, Linhai 317003Analysis and Measurement Center, Zhejiang University, Hangzhou 310027
Au5Si2/Si Heterojunction Nanowires Formed by Combining SiO Evaporation with Vapour--Liquid--Solid Mechanism
PAN Guo-Wei1;YING Guo-Liang2;YONG Ben-Shou1;WAN Yu-Ting1; ZENG Yue-Wu3;SU Zi-Xue1
1Department of Physics, Zhejiang University, Hangzhou 3100272Information Technology Center, Taizhou College, Linhai 317003Analysis and Measurement Center, Zhejiang University, Hangzhou 310027
摘要Crystalline Au5Si2/Si heterojunction nanowires (Au5Si2/SiNWs) are obtained by thermal evaporating SiO powders on thick gold-coated silicon substrates in a low vacuum system. Structure analysis of the produced Au5Si2/Si heterojunctions is performed by employing a transmission electron microscope (TEM) and a selected area electric diffractometer. The chemical compositions are studied by a energy-dispersive x-ray spectroscope attached to the TEM. A two-step growth model is proposed to describe the formation of the Au5Si2/SiNWs. During the first step, crystalline SiNWs are formed via a growth mechanism combining the oxide-assisted growth process with the vapour-liquid-solid model at relatively high temperature. In the second step, the temperature decreases and one segment of the preformed SiNWs reacts with the remnant Au to form single crystalline Au5Si2 nanowires by a solid-liquid-solid process. The present work should be useful for the future synthesis and research of high-quality gold silicide nanowires and microelectronic devices based on the nanowires.
Abstract：Crystalline Au5Si2/Si heterojunction nanowires (Au5Si2/SiNWs) are obtained by thermal evaporating SiO powders on thick gold-coated silicon substrates in a low vacuum system. Structure analysis of the produced Au5Si2/Si heterojunctions is performed by employing a transmission electron microscope (TEM) and a selected area electric diffractometer. The chemical compositions are studied by a energy-dispersive x-ray spectroscope attached to the TEM. A two-step growth model is proposed to describe the formation of the Au5Si2/SiNWs. During the first step, crystalline SiNWs are formed via a growth mechanism combining the oxide-assisted growth process with the vapour-liquid-solid model at relatively high temperature. In the second step, the temperature decreases and one segment of the preformed SiNWs reacts with the remnant Au to form single crystalline Au5Si2 nanowires by a solid-liquid-solid process. The present work should be useful for the future synthesis and research of high-quality gold silicide nanowires and microelectronic devices based on the nanowires.
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2008, Vol. 25 
