摘要N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates. Thicknesses of ZnO films are altered by varying the deposition time from 1h to 3h. The electrical properties of these structures are analysed from capacitance--voltage (C--V) and current--voltage (I--V) characteristics performed in a dark room. The results demonstrated that all the samples show strong rectifying behaviour. Photovoltaic property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current. It is found that photovoltages are kept to be almost constant of 320mV along with the thickness while photocurrents changing a lot. The variation mechanism of the photovoltaic effect as a function of thickness of ZnO films is investigated.
Abstract：N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates. Thicknesses of ZnO films are altered by varying the deposition time from 1h to 3h. The electrical properties of these structures are analysed from capacitance--voltage (C--V) and current--voltage (I--V) characteristics performed in a dark room. The results demonstrated that all the samples show strong rectifying behaviour. Photovoltaic property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current. It is found that photovoltages are kept to be almost constant of 320mV along with the thickness while photocurrents changing a lot. The variation mechanism of the photovoltaic effect as a function of thickness of ZnO films is investigated.N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates. Thicknesses of ZnO films are altered by varying the deposition time from 1h to 3h. The electrical properties of these structures are analysed from capacitance--voltage (C--V) and current--voltage (I--V) characteristics performed in a dark room. The results demonstrated that all the samples show strong rectifying behaviour. Photovoltaic property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current. It is found that photovoltages are kept to be almost constant of 320mV along with the thickness while photocurrents changing a lot. The variation mechanism of the photovoltaic effect as a function of thickness of ZnO films is investigated.
ZHANG Wei-Ying;ZHONG Sheng;SUN Li-Jie;FU Zhu-Xi. Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films[J]. 中国物理快报, 2008, 25(5): 1829-1831.
ZHANG Wei-Ying, ZHONG Sheng, SUN Li-Jie, FU Zhu-Xi. Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films. Chin. Phys. Lett., 2008, 25(5): 1829-1831.
[1] Tang Z K, Wong G K L, Yu P, Kawasaki M, Ohtomo A, Koinuma H andSegawa Y 1998 Appl. Phys. Lett. 72 3270 [2] Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T1997 Appl. Phys. Lett. 70 2230 [3] Li H D, Yu S F, Lau S P and Leong E S P 2006 Appl. Phys.Lett. 89 021110 [4] Yu S F, Yuen C, Lau S P and Lee H W 2004 Appl. Phys. Lett. 84 3244 [5] Li H D, Yu S F, Abiyasa A P, Yuen C, Lau S P, Yang H Y and Leong ES P 2005 Appl. Phys. Lett. 86 261111 [6] Pauporte T, Lincot D, Viana B and Pelle F 2006 Appl. Phys.Lett. 89 233112 [7] Ye Z Z, Lu J G, Zhang Y Z, Zeng Y J, Chen L L, Zhuge F, Yuan G D,He H P, Zhu L P, Huang J Y and Zhao B H 2007 Appl. Phys. Lett. 91 113503 [8] Wei Z P, Lu Y M, Shen D Z, Zhang Z Z, Yao B, Li B H, Zhang J Y,Zhao D X, Fan X W and Tang Z K 2007 Appl. Phys. Lett. 90042113 [9] Jasenek A, Rau U, Weinert K, K\"otschau I M, Hanna G, Voorwinden G,Powalla M, Schock H W and Werner J H 2001 Thin Solid Films 387 228 [10] Kessler J, Ruckh M, Velthaus K O and Schock H W 1993 Appl.Phys. Lett. 62 597 [11] Shukri Z A, Yip L S, Qiu C X , Shih I and Champness C H 1995 Sol. Energy Mater. Sol. Cells 37 395 [12] Mart\i nez M A, Herrero J and Gutierrez M T 1997 Sol. Energy Mater. Sol. Cells 45 75 [13] Kobayashi H, Kogetsu Y, Ishida T, and Nakato Y 1993 J. Appl.Phys. 74 4756 [14] Kobayashi H, Tachibana S, Yamanaka K, Nakato Y and Yoneda K 1997 J. Appl. Phys. 81 7630 [15] Kobayashi H, Ishida T, Nakato Y and Mori H 1995 J. Appl.Phys. 78 3931 [16] Baik D G, Cho S M 1999 Thin Solid Films 354 227 [17] Kobayashi H, Mori H, Ishida T and Nakato Y 1995 J. Appl.Phys. 77 1301 [18] Song D Y, Aberle A G and Xia J 2002 Appl. Surf. Sci. 195 291 [19] Mridha S, Basak D 2006 Chem. Phys. Lett. 42762 [20] Kishimoto S, Yamamoto T, Nakagawa Y, Ikeda K, Makino H and YamadaT 2006 Superlattices and Microstructures 39 306 [21] Mridha S and Basak D 2007 Mater. Res. Bull. 42 875 [22] Dong B Z, Fang G J, Wang J F, Guan W J and Zhao X Z 2007 J.Appl. Phys. 101 033713 [23] Okamura T, Seki Y, Nagakari S and Okushi H 1992 Jpn. J. Appl.Phys. 31 L762 [24] Chen C, Yang Q Z, Min H F, Wang ZY and Wang X D 1986 J.Xiamen University 3 6 (in Chinese)
2008, Vol. 25 
