1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 4300743Department of photoelectric devices, Southwest Institute of Technical Physics, Chengdu 610041
Long Lifetime State of Shallow Donor Centres for Silicon Based THz Sources
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 4300743Department of photoelectric devices, Southwest Institute of Technical Physics, Chengdu 610041
摘要Impurity centres in high purity silicon with ionization energies 38.32 and 40.09meV are observed by photo-thermal ionization spectroscopy measurements. Their typical shallow donor characteristics are approved by good agreement with theoretic evaluation under varying magnetic fields. The 2p0 state lifetime of one donor centres are more than 3 times longer than that of phosphorus in the same silicon sample. Compared to phosphorus which has been already successfully exploited to produce silicon-based THz radiations, this shallow donor centre has a pronounced enhancement on lifetime and quality factor of population inversion level. Hence, silicon with this donor centre would be a potential excellent candidate to develop improved silicon-based THz sources.
Abstract：Impurity centres in high purity silicon with ionization energies 38.32 and 40.09meV are observed by photo-thermal ionization spectroscopy measurements. Their typical shallow donor characteristics are approved by good agreement with theoretic evaluation under varying magnetic fields. The 2p0 state lifetime of one donor centres are more than 3 times longer than that of phosphorus in the same silicon sample. Compared to phosphorus which has been already successfully exploited to produce silicon-based THz radiations, this shallow donor centre has a pronounced enhancement on lifetime and quality factor of population inversion level. Hence, silicon with this donor centre would be a potential excellent candidate to develop improved silicon-based THz sources.
YU Chen-Hui;ZHANG Bo;CHEN Chang-Qing;YU Li-Bo;LU Wei;SHEN Xue-Chu. Long Lifetime State of Shallow Donor Centres for Silicon Based THz Sources[J]. 中国物理快报, 2009, 26(2): 27101-027101.
YU Chen-Hui, ZHANG Bo, CHEN Chang-Qing, YU Li-Bo, LU Wei, SHEN Xue-Chu. Long Lifetime State of Shallow Donor Centres for Silicon Based THz Sources. Chin. Phys. Lett., 2009, 26(2): 27101-027101.
[3] Kohler R, Tredicucci A, Beltram F, Beere H E, Linfield EH, Davies A G, Ritchie D A, Iotti R C and Rossi F 2002 Nature 417 156 [4] Hubers H W, Pavlov S G, Riemann H, Abrosimov N V, ZhukavinR K and Shastin V N 2004 Appl. Phys. Lett. 84 3600 [5] Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A andPaniccia M 2005 Nature 433 725 [6] Guo R, Akiyama K, Minamide H and Ito H 2006 Appl.Phys. Lett. 88 091120-1 [7] Pavlov S G, Hubers H W, Hovenier J N, Klaassen T O, CarderD A, Phillips P J, Redlich B, Riemann H, Zhukavin R K and Shastin VN 2006 Phys. Rev. Lett. 96 037404-1 [8] H\"{ubers H W, Pavlov S G and Shastin V N 2005 Semicond. Sci. Technol. 20 S211 [9] Pavlov S G, Hubers H W, Riemann H, Zhukavin R K, Orlova EE and Shastin V N 2002 J. Appl. Phys. 92 5632 [10] Pavlov S G, Zhukavin R K, Orlova E E, Shastin V N,Kirsanov A V, Hubers H W, Auen K and Riemann H 2000 Phys. Rev.Lett. 84 5220 [11] Hubers H W, Pavlov S G, Greiner-Bar M, Rummeli M H,Kimmitt M F, Zhukavin R K, Riemann H and Shastin V N 2002 Phys.Status Solidi B 233 191 [12] Pavlov S G, Hubers H W, Rummeli M H, Zhukavin R K, OrlovaE E, Shastin V N and Riemann H 2002 Appl. Phys. Lett. 804717 [13] Shastin V N, Zhukavin R K, Orlova E E, Pavlov S G,Rummeli M H, Hubers H W, Hovenier J N, Klaassen T O, Riemann H,Bradley I V and van der Meer A F G 2002 Appl. Phys. Lett. 80 3512 [14] Mu Y M, Peng J P, Liu P L, Shen S C and Zhu J B 1993 Phys. Rev. B 48 10864 [15] Yu C H, Zhang B, Li Y J, Lu W and Shen X C 2007 Solid State Commun. 142 [16] ZHU X, YANG D R, LI M, CHEN T, WANG L and QUE D L 2008 Chin. Phys. Lett. 55 651 [17] Yu Z Y, Huang Y X and Shen S C 1989 Appl. Phys.Lett. 55 2084 [18] Navarro H, Griffin J, Weber J and Genzel L 1986 Solid State Commun. 58 151 [19] Chen C S, Li C F, Ye H J, Shen S C and Yang D R 1994 J. Appl. Phys. 76 3347 [20] Holzlein K, Pensl G, Schulz M and Johnson N M 1986 Appl. Phys. Lett. 48 [21] Hu C M, Huang Y X, Ye H J, Shen S C and Qi M W 1991 Appl. Phys. Lett. 59 2260 [22] Suezawa M, Sumino K, Harada H and Abe T 1986 Jpn. J.Appl. Phys. 25 L859 [23] Qian J J, Wang Z G, Wan S K and Lin L Y 1990 J.Appl. Phys. 68 954 [24] Ramdas A K and Rodriguez S 1981 Rep. Prog. Phys. 44 1297
2009, Vol. 26 
