1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 4300743Department of photoelectric devices, Southwest Institute of Technical Physics, Chengdu 610041
Long Lifetime State of Shallow Donor Centres for Silicon Based THz Sources
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000832Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 4300743Department of photoelectric devices, Southwest Institute of Technical Physics, Chengdu 610041
摘要Impurity centres in high purity silicon with ionization energies 38.32 and 40.09meV are observed by photo-thermal ionization spectroscopy measurements. Their typical shallow donor characteristics are approved by good agreement with theoretic evaluation under varying magnetic fields. The 2p0 state lifetime of one donor centres are more than 3 times longer than that of phosphorus in the same silicon sample. Compared to phosphorus which has been already successfully exploited to produce silicon-based THz radiations, this shallow donor centre has a pronounced enhancement on lifetime and quality factor of population inversion level. Hence, silicon with this donor centre would be a potential excellent candidate to develop improved silicon-based THz sources.
Abstract:Impurity centres in high purity silicon with ionization energies 38.32 and 40.09meV are observed by photo-thermal ionization spectroscopy measurements. Their typical shallow donor characteristics are approved by good agreement with theoretic evaluation under varying magnetic fields. The 2p0 state lifetime of one donor centres are more than 3 times longer than that of phosphorus in the same silicon sample. Compared to phosphorus which has been already successfully exploited to produce silicon-based THz radiations, this shallow donor centre has a pronounced enhancement on lifetime and quality factor of population inversion level. Hence, silicon with this donor centre would be a potential excellent candidate to develop improved silicon-based THz sources.
YU Chen-Hui;ZHANG Bo;CHEN Chang-Qing;YU Li-Bo;LU Wei;SHEN Xue-Chu. Long Lifetime State of Shallow Donor Centres for Silicon Based THz Sources[J]. 中国物理快报, 2009, 26(2): 27101-027101.
YU Chen-Hui, ZHANG Bo, CHEN Chang-Qing, YU Li-Bo, LU Wei, SHEN Xue-Chu. Long Lifetime State of Shallow Donor Centres for Silicon Based THz Sources. Chin. Phys. Lett., 2009, 26(2): 27101-027101.
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