Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications
ZHAO Yong-Mei1,2, SUN Guo-Sheng1, NING Jin2, LIU Xing-Fang1, ZHAO Wan-Shun1, WANG Lei1, LI Jin-Min1
1Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832State Key Laboratories of Transducer Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications
1Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832State Key Laboratories of Transducer Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm (AFM 5×5μm images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.
Abstract：Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm (AFM 5×5μm images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.
ZHAO Yong-Mei;SUN Guo-Sheng;NING Jin;LIU Xing-Fang;ZHAO Wan-Shun;WANG Lei;LI Jin-Min. Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications[J]. 中国物理快报, 2008, 25(6): 2269-2272.
ZHAO Yong-Mei, SUN Guo-Sheng, NING Jin, LIU Xing-Fang, ZHAO Wan-Shun, WANG Lei, LI Jin-Min. Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications. Chin. Phys. Lett., 2008, 25(6): 2269-2272.
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2008, Vol. 25 
