摘要We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, Fe80Ni20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230°C and high pressure 4.8GPa. This work provides an original method for synthesis of high quality hetero-semiconductor with cBN and diamond single crystals, and paves the way for future development.
Abstract：We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, Fe80Ni20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230°C and high pressure 4.8GPa. This work provides an original method for synthesis of high quality hetero-semiconductor with cBN and diamond single crystals, and paves the way for future development.
(Growth from solid phases (including multiphase diffusion and recrystallization))
引用本文:
GAO Feng;JIA Xiao-Peng;MA Hong-An;GUO Wei;LIU Xiao-Bing. Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature[J]. 中国物理快报, 2008, 25(6): 2273-2276.
GAO Feng, JIA Xiao-Peng, MA Hong-An, GUO Wei, LIU Xiao-Bing. Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature. Chin. Phys. Lett., 2008, 25(6): 2273-2276.
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