Efficient Pumping Scheme by Direct Excitation of Upper Laser Level in Nd:CNGG
CAO Ning1, LI Qi-Nan1, ZHAO Yan-Ying1, XU Chang-Wen1, WEI Zhi-Yi1, FENG Bao-Hua1, ZHANG Zhi-Guo1, ZHANG Huai-Jin2, WANG Ji-Yang2, HE Kun-Na3, GAO Chun-Qing3
1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902State Key Laboratory of Crystal Material and Institute of Crystal Material, Shandong University, Jinan 2501003School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081
Efficient Pumping Scheme by Direct Excitation of Upper Laser Level in Nd:CNGG
CAO Ning1, LI Qi-Nan1, ZHAO Yan-Ying1, XU Chang-Wen1, WEI Zhi-Yi1, FENG Bao-Hua1, ZHANG Zhi-Guo1, ZHANG Huai-Jin2, WANG Ji-Yang2, HE Kun-Na3, GAO Chun-Qing3
1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902State Key Laboratory of Crystal Material and Institute of Crystal Material, Shandong University, Jinan 2501003School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081
We report an efficient pumping scheme which involves a direct excitation of the upper lasing level of a four-level laser in a Nd-doped Ca3(NbGa)2-xGa3O12 (Nd:CNGG) by using a tunable Ti:sapphire, 700-920nm, cw pump source. The slope efficiency is improved from 10.5% of the traditional band pumping at 808nm to 21.8% of the direct pumping at 882nm. The influence of pumping wavelength on lasing is discussed. We present a scheme of double pumping for lasing.
We report an efficient pumping scheme which involves a direct excitation of the upper lasing level of a four-level laser in a Nd-doped Ca3(NbGa)2-xGa3O12 (Nd:CNGG) by using a tunable Ti:sapphire, 700-920nm, cw pump source. The slope efficiency is improved from 10.5% of the traditional band pumping at 808nm to 21.8% of the direct pumping at 882nm. The influence of pumping wavelength on lasing is discussed. We present a scheme of double pumping for lasing.
[1] Fan T Y 1993 IEEE J. Quantum Electron. 29 1457 [2] Brown D C 1998 IEEE J. Quantum Electron. 34 560 [3] Ross M 1968 Proc. IEEE 56 196 [4] Lavi R et al 1999 Appl. Opt. 38 7382 [5] Lavi R and Jackel S 2000 Appl. Opt. 39 3093 [6] Verdeyen J T 1989 Laser Electronics 2nd edn (Englewood Cliffs, NJ: Prentice-Hall) p 232 [7] Lavi R et al 2001 Opt. Commun. 195 427 [8] Lupei V et al 2002 Appl. Phys. Lett. 80 4309 [9] Sato Y et al 2003 Appl. Phys. Lett. 82 844 [10] Lupei V et al 2003 Opt. Lett. 28 2366 [11] Frede M, Wilhelm R and Kracht D 2006 Opt. Lett. 31 3618 [12] Caldifio U et al 1995 Opt. Mater. 4 713 [13] Naito K et al 1993 Appl. Opt. 32 7387 [14] Zhang H J et al 2007 Opt. Express 15 9464 [15] Mukhopadhyay P K et al 2003 Opt. Laser Technol. 35 173