摘要The surface damage to gallium nitride films irradiated by Arq+ (6≤q≤16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120keV≤Ek≤220keV). For q≤14, surface of the irradiated region is covered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state, and increase with the increase of dose and charge state. Especially at and near boundary, a sharp bump like ridges in irradiated areas is observed, and there appear characteristic grooves in un-irradiated areas. For q=16, surface of the irradiated region was etched and erased.
Abstract：The surface damage to gallium nitride films irradiated by Arq+ (6≤q≤16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120keV≤Ek≤220keV). For q≤14, surface of the irradiated region is covered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state, and increase with the increase of dose and charge state. Especially at and near boundary, a sharp bump like ridges in irradiated areas is observed, and there appear characteristic grooves in un-irradiated areas. For q=16, surface of the irradiated region was etched and erased.
(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
引用本文:
ZHANG Li-Qing;ZHANG Chong-Hong;YANG Yi-Tao;YAO Cun-Feng;LI Bing-Sheng;SUN You-Mei;SONG Shu-Jian. Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions[J]. 中国物理快报, 2009, 26(3): 36101-036101.
ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao, YAO Cun-Feng, LI Bing-Sheng, SUN You-Mei, SONG Shu-Jian. Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions. Chin. Phys. Lett., 2009, 26(3): 36101-036101.
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