Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films
XIAO Hai-Qing1, ZHOU Chun-Lan2, CAO Xiao-Ning2, WANG Wen-Jing2, ZHAO Lei2, LI Hai-Ling2, DIAO Hong-Wei2
1Institute of Industrial Product Inspection, Chinese Academy of Inspection and Quarantine, Beijing 1001232Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190
Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films
XIAO Hai-Qing1, ZHOU Chun-Lan2, CAO Xiao-Ning2, WANG Wen-Jing2, ZHAO Lei2, LI Hai-Ling2, DIAO Hong-Wei2
1Institute of Industrial Product Inspection, Chinese Academy of Inspection and Quarantine, Beijing 1001232Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190
摘要Al2O3 films with a thickness of about 100nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100cm/s is obtained on 10Ω·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.
Abstract：Al2O3 films with a thickness of about 100nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100cm/s is obtained on 10Ω·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.
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2009, Vol. 26 
