Enhancement of Band Edge Emission from ZnS/Zn(OH)2 Quantum Dots
Hatim Mohamed El-Khair, XU Ling, HUANG Xin-Fan, LI Ming-Hai, CHEN Kun-Ji
National Laboratory of Solid State Microstructures and
Department of Physics, Nanjing University, Nanjing 210093
Enhancement of Band Edge Emission from ZnS/Zn(OH)2 Quantum Dots
Hatim Mohamed El-Khair;XU Ling;HUANG Xin-Fan;LI Ming-Hai;CHEN Kun-Ji
National Laboratory of Solid State Microstructures and
Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
86.65.+g ,
78.55.Et ,
81.65.Rv ,
82.45.+z
Abstract ： ZnS and Zn(OH)2 capped ZnS semiconductor quantum dots (QDs) have been synthesized by the colloidal chemical method using inorganic reagents. Transmission electron microscopy and electron diffraction results showed that the monodispersed ZnS QDs have 1 to 5 nm in diameter and the wurtzite structure. The polarities of the precursors and surfactant solvents have shown strong effects on the properties of the photoluminescence for ZnS QDs. For ZnS QDs capped with a wider band gap Zn(OH)2 shell, the surface trap states were passivated and hence the band-edge emissions have been enhanced.
Key words ：
86.65.+g
78.55.Et
81.65.Rv
82.45.+z
出版日期: 2001-04-01
引用本文:
Hatim Mohamed El-Khair;XU Ling;HUANG Xin-Fan;LI Ming-Hai;CHEN Kun-Ji. Enhancement of Band Edge Emission from ZnS/Zn(OH)2 Quantum Dots[J]. 中国物理快报, 2001, 18(4): 616-618.
2 Quantum Dots. Chin. Phys. Lett., 2001, 18(4): 616-618.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I4/616
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