2009, Vol. 26(8): 88102-088102    DOI: 10.1088/0256-307X/26/8/088102
Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films
XIAO Hai-Qing1, ZHOU Chun-Lan2, CAO Xiao-Ning2, WANG Wen-Jing2, ZHAO Lei2, LI Hai-Ling2, DIAO Hong-Wei2
1Institute of Industrial Product Inspection, Chinese Academy of Inspection and Quarantine, Beijing 1001232Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190
收稿日期 2009-02-13  修回日期 1900-01-01
Supporting info

[1] Mulligan P. M et al 2004 Proceedings of the 19th
EU-PVSEC (Paris WIP Renewable Energies, Munich) p 387

[2] Hezel R and Jaeger K 1989 J. Electrochem. Soc. Am.
136 518

[3] Hoex B et al 2006 Appl. Phys. Lett. 89 042112

[4] Lucovvsky G PJC, Thorpe M F 2000 Proc. Char. Met.
ULSI Tech. (Gaithersburg, MD, USA 26--29 June 2000) p 154

[5] McIntosh K R et al 2008 Prog. Photovoltaics 16
279

[6] Masalski J et al 1999 Thin Solid Films 349 186

[7] Yoldas B E 1975 J. Mater. Sci 10 1856

[8] Yablanovitch E et al 1986 Phys. Rev. Lett. 57
249

[9] Agostinelli G et al 2006 Sol. Energy Mater. Sol.
Cells 90 3438

[10] Kerr M J and Cuevas A 2002 J. Appl. Phys. 91
2473

[11] Glunz S W et al 1999 J. Appl. Phys. 86 683

[12] Horanyi T S PT and Tutto 1993 Appl. Surf. Sci.
63 306