2009, Vol. 26(8): 88102-088102 DOI: 10.1088/0256-307X/26/8/088102 | ||
Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films | ||
XIAO Hai-Qing1, ZHOU Chun-Lan2, CAO Xiao-Ning2, WANG Wen-Jing2, ZHAO Lei2, LI Hai-Ling2, DIAO Hong-Wei2 | ||
1Institute of Industrial Product Inspection, Chinese Academy of Inspection and Quarantine, Beijing 1001232Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190 | ||
收稿日期 2009-02-13 修回日期 1900-01-01 | ||
Supporting info | ||
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