CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun
Institute of Photo-electronic Thin Film Devices and Technology, and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071
CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun
Institute of Photo-electronic Thin Film Devices and Technology, and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071
摘要The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.
Abstract：The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.
YU Tao;ZHANG Yi;LI Bao-Zhang;JIANG Wei-Long;WANG He;CAI Yong-An;LIU Wei;LI Feng-Yan;SUN Yun. CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures[J]. 中国物理快报, 2010, 27(2): 28101-028101.
YU Tao, ZHANG Yi, LI Bao-Zhang, JIANG Wei-Long, WANG He, CAI Yong-An, LIU Wei, LI Feng-Yan, SUN Yun. CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures. Chin. Phys. Lett., 2010, 27(2): 28101-028101.
[1] Repins I et al 2008 Prog. Photovoltaics 16 235 [2] Powalla M et al 2006 Solar Energy Mater. Solar Cells 90 3158 [3] Kushiya K et al 2009 Thin Solid Films 517 2108 [4] Marsh R E, Pauling L et al 1953 Acta Cryst. 6 71 [5] Lakshmikumar S T et al 1994 J. Appl. Phys. 76 3068 [6] Kosaraju S et al 2005 J. Vac. Sci. Technol. A 23 1202 [7] Yu T et al 2009 Chin. Phys. B (submitted) [8] Yu T et al 2009 Chin. Phys. B (submitted) [9] Deok Kim S et al 2000 Solar Energy Mater. Solar Cells 62 357 [10] Lakshmikumar S T et al 1995 Appl. Phys. Lett. 66 3128 [11] Sun Y A et al 2008 Technique for Producing High Active Selenium Source for Selenization Process and Its Apparatus and Applications China Patent No 2008100530515 (in Chinese) [12] Kim W K 2006 Study of Reaction Pathways and Kinetics In Cu(In$_{x$Ga$_{1-x$)Se Thin Film Growth (Florida: University of Florida) p 109 [13] Xu C M et al 2006 Chin. Phys. Lett. 23 2259 [14] Ishizuka S et al 2009 Solar Energy Mater. Solar Cells 93 792 [15] Guillen J H C 2002 Vacuum 67 659 [16] Lieberman M A and Lichtenberg A J 2005 Principles of Plasma Discharges and Materials Processing (New York: John Wiley {\& Sons, Inc.)
2010, Vol. 27 
