Surface Oxidation Properties in a Topological Insulator Bi<sub>2</sub>Te<sub>3</sub> Film

doi:10.1088/0256-307X/30/10/106801

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Abstract：Bi₂Te₃ films are grown on (111)-oriented GaAs substrates by using the hot wall epitaxy method and the surface oxidation properties in the films are investigated by x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. The results show that the films are c-axis oriented. Two pairs of new peaks in the XPS spectra involved with the binding energies from Bi 4f and Te 3d electrons correspond to Bi–O–Te bonds. Besides the A_1g¹, E_g² andA_1g² vibration modes from Bi₂Te₃ films, two new peaks at 93.5 cm^?1 and 123 cm^?1 are observed in Raman spectra, which are assigned to α-Bi₂O₃ and TeO₂, respectively. Our results are helpful for analyzing the degradation mechanism of topological surface states in Bi₂Te₃.

收稿日期: 2013-04-10 出版日期: 2013-11-21

:	68.47.Fg	(Semiconductor surfaces)
	81.15.Ef
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

引用本文:

. [J]. 中国物理快报, 2013, 30(10): 106801-106801.
GUO Jian-Hua, QIU Feng, ZHANG Yun, DENG Hui-Yong, HU Gu-Jin, LI Xiao-Nan, YU Guo-Lin, DAI Ning. Surface Oxidation Properties in a Topological Insulator Bi₂Te₃ Film. Chin. Phys. Lett., 2013, 30(10): 106801-106801.

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https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/10/106801 或 https://cpl.iphy.ac.cn/CN/Y2013/V30/I10/106801

[1]	. [J]. 中国物理快报, 2020, 37(6): 66801-.
[2]	. [J]. 中国物理快报, 0, (): 66801-.
[3]	. [J]. 中国物理快报, 2018, 35(6): 66801-.
[4]	. [J]. 中国物理快报, 2018, 35(2): 26501-.
[5]	. [J]. 中国物理快报, 2018, 35(2): 26802-.
[6]	. [J]. 中国物理快报, 2016, 33(12): 126801-126801.
[7]	SHAO Jia-Ping;HAN Yan-Jun;WANG Lai;JIANG Yang;XI Guang-Yi;LI Hong-Tao;ZHAO Wei;LUO Yi. Improved Surface Characteristics and Contact Performance of Epitaxial p-AlGaN by a Chemical Treatment Process[J]. 中国物理快报, 2006, 23(2): 432-435.