摘要We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200\times 200 ×μm2 square mesa.
Abstract：We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200\times 200 ×μm2 square mesa.
(Quantum well devices (quantum dots, quantum wires, etc.))
引用本文:
KONG Ning;LIU Jun-Qi;LI Lu;LIU Feng-Qi;WANG Li-Jun;WANG Zhan-Guo. Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature[J]. 中国物理快报, 2010, 27(3): 38501-038501.
KONG Ning, LIU Jun-Qi, LI Lu, LIU Feng-Qi, WANG Li-Jun, WANG Zhan-Guo. Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature. Chin. Phys. Lett., 2010, 27(3): 38501-038501.
2010, Vol. 27 
