Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film
LIU Yan1,2, SONG Zhi-Tang1, LING Yun1, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate School of the Chinese Academy of Sciences, Beijing 100049
Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film
LIU Yan1,2, SONG Zhi-Tang1, LING Yun1, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate School of the Chinese Academy of Sciences, Beijing 100049
摘要A thin TiO2 layer inserted in a phase change memory (PCM) cell to form a deep sub-micro bottom electrode (DBE) is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.
Abstract：A thin TiO2 layer inserted in a phase change memory (PCM) cell to form a deep sub-micro bottom electrode (DBE) is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.
LIU Yan;SONG Zhi-Tang;LING Yun;FENG Song-Lin. Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film[J]. 中国物理快报, 2010, 27(3): 38502-038502.
LIU Yan, SONG Zhi-Tang, LING Yun, FENG Song-Lin. Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film. Chin. Phys. Lett., 2010, 27(3): 38502-038502.
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2010, Vol. 27 
