Memristive Behavior Based on Ba-Doped SrTiO$_{3}$ Films
Gang Dou, Yang Yu, Mei Guo** , Yu-Man Zhang, Zhao Sun, Yu-Xia Li
College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590
Abstract ：The Sr$_{0.95}$Ba$_{0.05}$TiO$_{3}$ (SBT) nanometer film is prepared on the commercially available Pt/TiO$_{2}$/SiO$_{2}$/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model $M(q)=12.3656-267.4038|q(t)|$ is calculated, where $M(q)$ denotes the memristance depending on the quantity of electric charge, and $q(t)$ denotes the quantity of electric charge depending on the time. The theoretical $I$–$V$ characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical $I$–$V$ characteristics are consistent with the measured $I$–$V$ characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.
收稿日期: 2016-11-09
出版日期: 2017-02-28
:
85.25.Hv
(Superconducting logic elements and memory devices; microelectronic circuits)
84.32.-y
(Passive circuit components)
84.32.Ff
(Conductors, resistors (including thermistors, varistors, and photoresistors))
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2017, Vol. 34 
