中国物理快报  2010, Vol. 27 Issue (3): 38503-038503    DOI: 10.1088/0256-307X/27/3/038503
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes
PAN Yao-Bo1,2, HAO Mao-Sheng3, QI Sheng-Li1, FANG Hao1, ZHANG Guo-Yi1
1School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871 2Epilight Technology Co., Ltd., Shanghai 201210 3Technology Center for IRICO Group Corporation, Beijing 100085
Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes
PAN Yao-Bo1,2, HAO Mao-Sheng3, QI Sheng-Li1, FANG Hao1, ZHANG Guo-Yi1
1School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871 2Epilight Technology Co., Ltd., Shanghai 201210 3Technology Center for IRICO Group Corporation, Beijing 100085