Role of Residual O2 in Fabrication of A1-MgF2 -Au(Cu) Thin Film Devices
ZHENG Keqin, SHU Qiqing, CHEN Xinyong
Department of Applied Physics, Chongqing University, Chongqing 630044
Role of Residual O2 in Fabrication of A1-MgF2 -Au(Cu) Thin Film Devices
ZHENG Keqin;SHU Qiqing;CHEN Xinyong
Department of Applied Physics, Chongqing University, Chongqing 630044
关键词 ：
73.40.Gk ,
68.55.Gi
Abstract ： After the light emitting device Al-MgF2 -Au (Cu) junction was reported, we made a further investigation about its structure, high voltage-resistance, explaination of l-V characteristic and mechanism of light emission of these junctions through analyzing in detail. The residual O2 during fabricating the junctions plays an important role in the properties of the junctions.
Key words ：
73.40.Gk
68.55.Gi
出版日期: 1994-06-01
引用本文:
ZHENG Keqin;SHU Qiqing;CHEN Xinyong. Role of Residual O2 in Fabrication of A1-MgF2 -Au(Cu) Thin Film Devices[J]. 中国物理快报, 1994, 11(6): 379-382.
2 in Fabrication of A1-MgF2 -Au(Cu) Thin Film Devices. Chin. Phys. Lett., 1994, 11(6): 379-382.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I6/379
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