Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films
WANG Xiao-Ping1,2, WANG Li-Jun1, ZHANG Bing-Lin2, YAO Ning2, MA Hui-Zhong2, SONG Tian-Fu2, LI Guang-Ting1, YANG Shi-E2, BIAN Chao2, LI Hui-Jun2, MA Bing-Xian2
1Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450005
2Department of Physics, Zhengzhou University, Zhengzhou 450052
Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films
Abstract： An electroluminescence (EL) device is investigated by using boron and nitrogen double-doped diamond films. The characteristics of the EL spectrum and the dependence of EL intensity on boron and nitrogen impurity are investigated. The experiment indicated that the intensity of EL increases obviously and the threshold voltage decreases with increasing nitrogen impurity within our doped level, meanwhile the highest emission line changes from the blue region (peaks at 470 nm) to the yellow region (peaks at 584 nm).
WANG Xiao-Ping;WANG Li-Jun;ZHANG Bing-Lin;YAO Ning;MA Hui-Zhong;SONG Tian-Fu;LI Guang-Ting;YANG Shi-E;BIAN Chao;LI Hui-Jun;MA Bing-Xian
. Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films
[J]. 中国物理快报, 2002, 19(5): 717-719.
WANG Xiao-Ping, WANG Li-Jun, ZHANG Bing-Lin, YAO Ning, MA Hui-Zhong, SONG Tian-Fu, LI Guang-Ting, YANG Shi-E, BIAN Chao, LI Hui-Jun, MA Bing-Xian
. Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films
. Chin. Phys. Lett., 2002, 19(5): 717-719.
2002, Vol. 19 
