Computer Simulation of Sputtering and Atomic Redistribution in
Hg0.8 Cd0.2 Te Targets Under Ar+ Ions Bombardment
XING Yuelin, XIA Yueyuan, HU Xierong
Department of Physics, Shandong University, Ji’nan 250100
Institute of Infrared Remote Sensing, Shandong University, Ji’nan 250100
Computer Simulation of Sputtering and Atomic Redistribution in
Hg0.8 Cd0.2 Te Targets Under Ar+ Ions Bombardment
XING Yuelin;XIA Yueyuan;HU Xierong
Department of Physics, Shandong University, Ji’nan 250100
Institute of Infrared Remote Sensing, Shandong University, Ji’nan 250100
关键词 ：
79.20.Rf
Abstract ： The sputtering of Hg0.8 Cd0.2 Te target by low energy Ar+ ions has been simulated using Monte Carlo method. The simulation results show that the concentration of Hg in the surface region of the target after ion bombardment is lower than the one before ion bombardment, but in a deeper region an excess concentration of Hg is produced due to recoil implantation. The excess concentration of Hg there may act as a donor dopant diffusion source for over doping the acceptor levels in the adjacent region and turn the p-type Hg0.8 Cd0.2 Te into an n-type material.
Key words ：
79.20.Rf
出版日期: 1994-11-01
:
79.20.Rf
(Atomic, molecular, and ion beam impact and interactions with surfaces)
引用本文:
XING Yuelin;XIA Yueyuan;HU Xierong. Computer Simulation of Sputtering and Atomic Redistribution in
Hg0.8 Cd0.2 Te Targets Under Ar+ Ions Bombardment
[J]. 中国物理快报, 1994, 11(11): 717-720.
0.8 Cd0.2 Te Targets Under Ar+ Ions Bombardment
. Chin. Phys. Lett., 1994, 11(11): 717-720.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I11/717
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