Backward Secondary Electron Emission Yield of Thick Targets Induced by MeV Ions
JIANG Lei, ZHOU Zhu-Ying, ZHAO Guo-Qing
Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433
Backward Secondary Electron Emission Yield of Thick Targets Induced by MeV Ions
JIANG Lei;ZHOU Zhu-Ying;ZHAO Guo-Qing
Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433
关键词 ：
79.20.Rf ,
34.50.Bw
Abstract ： The backward secondary electron emission yields of MeV ions (H+ , He+ , He++ , Cl, Si, and Cu ) impinging on thick carbon and gold targets are studied. The measured results for H+ (1 MeV≤ E≤ 5MeV) on carbon are proportional to the electronic stopping power. Our experimental data and fitting formula of yields for H+ (1 MeV≤ E≤ 4.5 MeV) impacting Au are compared with the theoretical expectation. The influence of the collective field and the charge state of ions on the secondary electron emission yield is discussed.
Key words ：
79.20.Rf
34.50.Bw
出版日期: 2000-09-01
:
79.20.Rf
(Atomic, molecular, and ion beam impact and interactions with surfaces)
34.50.Bw
(Energy loss and stopping power)
引用本文:
JIANG Lei;ZHOU Zhu-Ying;ZHAO Guo-Qing. Backward Secondary Electron Emission Yield of Thick Targets Induced by MeV Ions[J]. 中国物理快报, 2000, 17(9): 691-693.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I9/691
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