Electronic Structures of Wurtzite Compounds GaN, AlN and
Strained-Layer Superlattice (Ga2 N2 )1 (A12 N2 )1 (001)
KE Sanhuang, HUANG Meichun, WANG Renzhi
Department of Physics, Xiamen University, Xiamen 361005
Electronic Structures of Wurtzite Compounds GaN, AlN and
Strained-Layer Superlattice (Ga2 N2 )1 (A12 N2 )1 (001)
KE Sanhuang;HUANG Meichun;WANG Renzhi
Department of Physics, Xiamen University, Xiamen 361005
关键词 :
73.20.Dx ,
71.25.Tn
Abstract : The electronic structures of wurtzite compounds GaN, AlN and strained-layer superlattice (SLS) (Ga2 N2 )1 (A12 N2 )1 (001) constituted by straining GaN-layer to match the lattice constant of AlN according to the elastic theory are studied with the first-principles Linearized-Muffin-Tin-Orbitals band-structure method. The band offsets at the SLS are determined by the frozen potential approach. The resutls of the bulk materials are in good agreement with available experimental data.
Key words :
73.20.Dx
71.25.Tn
出版日期: 1993-12-01
引用本文:
KE Sanhuang;HUANG Meichun;WANG Renzhi. Electronic Structures of Wurtzite Compounds GaN, AlN and
Strained-Layer Superlattice (Ga2 N2 )1 (A12 N2 )1 (001)
[J]. 中国物理快报, 1993, 10(12): 748-751.
KE Sanhuang, HUANG Meichun, WANG Renzhi. Electronic Structures of Wurtzite Compounds GaN, AlN and
Strained-Layer Superlattice (Ga2 N2 )1 (A12 N2 )1 (001)
. Chin. Phys. Lett., 1993, 10(12): 748-751.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1993/V10/I12/748
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