LMTO Study on Band Structure of β-SiC/β-GaN (100) Interface
LU Wenchang, ZHANG Kaiming, XIE Xide
Department of Physics, Fudan University, Shanghai 200433
LMTO Study on Band Structure of β-SiC/β-GaN (100) Interface
LU Wenchang;ZHANG Kaiming;XIE Xide
Department of Physics, Fudan University, Shanghai 200433
关键词 ：
73.20.At ,
71.70.Ms
Abstract ： The linear muffin-tin orbital method and the supercell approach are used to study the band structures of the β-SiC/β-GaN (100) interface within the atomic sphere approximation. It is found that the Si-N, C-Ga bonding configuration is favorable. The band alignment is of type-I with the band gap of the β-GaN completely endosing the band gap of the β-Sic. The localized interface state strongly related to the interface C atoms exists in the original band gap.
Key words ：
73.20.At
71.70.Ms
出版日期: 1993-12-01
:
73.20.At
(Surface states, band structure, electron density of states)
71.70.Ms
引用本文:
LU Wenchang;ZHANG Kaiming;XIE Xide. LMTO Study on Band Structure of β-SiC/β-GaN (100) Interface[J]. 中国物理快报, 1993, 10(12): 744-747.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1993/V10/I12/744
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1993, Vol. 10 
