DAI Zhen-Hong1,2,3, SUN Jin-Zuo2,3, ZHANG Li-De1, LI Zuo-Hong2,3, HUANG Shi-Yong2,3, SUI Peng-Fei2,3
1Institute of Solid State Physics, Chinese Academy of
Sciences, P.O. Box 1129, Hefei 230031
2CCAST(World Laboratory), P.O. Box8730, Beijing 100080
3Department of Physics, Yantai University, Yantai 264005
Electron States of Few-Electron Quantum Dots
DAI Zhen-Hong1,2,3;SUN Jin-Zuo2,3;ZHANG Li-De1;LI Zuo-Hong2,3;HUANG Shi-Yong2,3;SUI Peng-Fei2,3
1Institute of Solid State Physics, Chinese Academy of
Sciences, P.O. Box 1129, Hefei 230031
2CCAST(World Laboratory), P.O. Box8730, Beijing 100080
3Department of Physics, Yantai University, Yantai 264005
Abstract： We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method based on the Gaussian Basis. Our emphasis is on the energy level calculation for quantum dots. The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well. Some valuable results, such as the rearrangement of the energy level, have been obtained.
(Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))
引用本文:
DAI Zhen-Hong;;SUN Jin-Zuo;ZHANG Li-De;LI Zuo-Hong;HUANG Shi-Yong;SUI Peng-Fei;. Electron States of Few-Electron Quantum Dots[J]. 中国物理快报, 2002, 19(1): 117-119.
DAI Zhen-Hong, , SUN Jin-Zuo, ZHANG Li-De, LI Zuo-Hong, HUANG Shi-Yong, SUI Peng-Fei,. Electron States of Few-Electron Quantum Dots. Chin. Phys. Lett., 2002, 19(1): 117-119.
2002, Vol. 19 
