Transient Process of Transport Through a Quantum Dot in a
Stepped Bias: a Numerical Approach
XIONG Yong-Jian1,2, XIONG Shi-Jie1
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Department of Physics, Xinyang Teachers College, Xinyang 464000
Transient Process of Transport Through a Quantum Dot in a
Stepped Bias: a Numerical Approach
XIONG Yong-Jian1,2;XIONG Shi-Jie1
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Department of Physics, Xinyang Teachers College, Xinyang 464000
Abstract： The time evolution of current though a quantum dot responding to a stepped bias voltage is studied by a numerical approach in the mixed-valence regime and the Kondo regime. Our numerical results show the quasi-periodic oscillations of the current with a short damping time. When the deviation of the Fermi energy from the resonant dot level is increased by changing the gate voltage, the frequency of the oscillations is increased, but the average current decreases. The results also show a relatively slow oscillation in the Kondo regime.
XIONG Yong-Jian;XIONG Shi-Jie. Transient Process of Transport Through a Quantum Dot in a
Stepped Bias: a Numerical Approach[J]. 中国物理快报, 2001, 18(12): 1638-1640.
XIONG Yong-Jian, XIONG Shi-Jie. Transient Process of Transport Through a Quantum Dot in a
Stepped Bias: a Numerical Approach. Chin. Phys. Lett., 2001, 18(12): 1638-1640.
2001, Vol. 18 
