Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation
YU Ke1,5, WANG Wei-Ming1, ZHU Zi-Qiang1, ZHANG Yong-Sheng1, YU Xian-Wen1, CHEN Shao-Qiang1, LI Qiong1, YANG Guang-Da2, ZHU Jian-Zhong1, CHEN Qun3, LU Wei4, ZI Jian6
1Department of Electric Engineering, East China Normal University, Shanghai 200062
2Department of Chemistry, East China Normal University, Shanghai 200062
3Analytical Center, East China Normal University, Shanghai 200062
4State Key Laboratory for Infrared Physics, Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
5School of Physics and Microelectronics, Shandong University, Jinan 250061
6National Key Laboratory for Applied Surface Physics, Fudan University, Shanghai 200433
Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation
1Department of Electric Engineering, East China Normal University, Shanghai 200062
2Department of Chemistry, East China Normal University, Shanghai 200062
3Analytical Center, East China Normal University, Shanghai 200062
4State Key Laboratory for Infrared Physics, Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
5School of Physics and Microelectronics, Shandong University, Jinan 250061
6National Key Laboratory for Applied Surface Physics, Fudan University, Shanghai 200433
Abstract： Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.
(Plasma reactions (including flowing afterglow and electric discharges))
引用本文:
YU Ke;WANG Wei-Ming;ZHU Zi-Qiang;ZHANG Yong-Sheng;YU Xian-Wen;CHEN Shao-Qiang;LI Qiong;YANG Guang-Da;ZHU Jian-Zhong;CHEN Qun;LU Wei;ZI Jian. Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation[J]. 中国物理快报, 2004, 21(1): 203-206.
YU Ke, WANG Wei-Ming, ZHU Zi-Qiang, ZHANG Yong-Sheng, YU Xian-Wen, CHEN Shao-Qiang, LI Qiong, YANG Guang-Da, ZHU Jian-Zhong, CHEN Qun, LU Wei, ZI Jian. Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation. Chin. Phys. Lett., 2004, 21(1): 203-206.
2004, Vol. 21 
