Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method
CEN Zhan-Hong, XU Jun, LIU Yan-Song, HAN Pei-Gao, LI Wei, HUANG Xin-Fan, CHEN Kun-Ji
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method
CEN Zhan-Hong;XU Jun;LIU Yan-Song;HAN Pei-Gao;LI Wei;HUANG Xin-Fan;CHEN Kun-Ji
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
81.07.Bc ,
81.16.Mk ,
78.55.Ap
Abstract ： KrF excimer laser annealing on ultrathin hydrogenated amorphous Si films with various initial Si thicknesses is carried out to obtain a single layer of nanocrystalline Si structures. It is found that Si nanograins can be obtained with the area density as high as 1011 cm-2 under the irradiation with suitable laser fluence. Raman and planar transmission electron microscopy are used to characterize the formation process of Si nanocrystals from amorphous phase. Moreover, a strong photoluminescence is observed at room temperature from well-relaxed nanocrystalline Si structures.
Key words ：
81.07.Bc
81.16.Mk
78.55.Ap
出版日期: 2006-04-01
引用本文:
CEN Zhan-Hong;XU Jun;LIU Yan-Song;HAN Pei-Gao;LI Wei;HUANG Xin-Fan;CHEN Kun-Ji. Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method[J]. 中国物理快报, 2006, 23(4): 1029-1031.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I4/1029
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