Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device
SHI Hongtao, ZHENG Youdou, WAND Yongbin, YUAN Renkuan
Department of Physics, Nanjing University, Nanjing 210008
Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device
SHI Hongtao;ZHENG Youdou;WAND Yongbin;YUAN Renkuan
Department of Physics, Nanjing University, Nanjing 210008
关键词 ：
78.20.Dj ,
78.60.Fi ,
78.65.Fa
Abstract ： We report the current-induced light emission (CILE) at RT from a porous silicon (PS) Schottky device exhibiting good rectifying characteristics with the ideal factor of 14. The photoluminescence spectrum from the PS layer fabricate by laterally anodization peaks at 668 nm. The intensity of CILE increases with increasing current. It has run for more than two hours and still keeps stable. Possible mechanism of CILE is discussed.
Key words ：
78.20.Dj
78.60.Fi
78.65.Fa
出版日期: 1992-10-01
引用本文:
SHI Hongtao;ZHENG Youdou;WAND Yongbin;YUAN Renkuan. Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device[J]. 中国物理快报, 1992, 9(10): 555-557.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1992/V9/I10/555
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1992, Vol. 9 
