Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs
LIN Wei-zhu, HUANG Chun, ZHANG Hai-chao, WEN Jin-hui, GUO Bing, LAI Tian-shu
State Key Laboratory of Ultrafast Laser Spectroscopy, Department of Physics Zhongshan University, Guangzhou 510275
Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs
LIN Wei-zhu;HUANG Chun;ZHANG Hai-chao;WEN Jin-hui;GUO Bing;LAI Tian-shu
State Key Laboratory of Ultrafast Laser Spectroscopy, Department of Physics Zhongshan University, Guangzhou 510275
关键词 ：
78.47.+p ,
78.55.Et
Abstract ： Ultrafast heavy hole-phonon interactions in highly n-doped GaAs have been selectively studied with femtosecond absorption saturation measurements by tuning the pump-probe photon energy just above the doped electron Fermi edge. A heavy hole-phonon scattering time of ~ 300fs has been measured, which is consistent with that calculated by a numerical model. Accordingly, an optical deformation potential of about 31 eV has been estimated for this highly n-doped sample.
Key words ：
78.47.+p
78.55.Et
出版日期: 1999-10-01
引用本文:
LIN Wei-zhu;HUANG Chun;ZHANG Hai-chao;WEN Jin-hui;GUO Bing;LAI Tian-shu. Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs[J]. 中国物理快报, 1999, 16(10): 758-760.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I10/758
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1999, Vol. 16 
