Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films
XU Jin, ZHANG Zi-Yu, ZHANG Yang, LIN Bi-Xia, FU Zhu-Xi
Department of Physics, University of Science and Technology of China, Hefei 230026
Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films
XU Jin;ZHANG Zi-Yu;ZHANG Yang;LIN Bi-Xia;FU Zhu-Xi
Department of Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
73.20.Hb ,
78.55.Et ,
73.61.Ga
Abstract ： ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002 % on the photoluminescence and current-voltage (I-V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I-V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.
Key words ：
73.20.Hb
78.55.Et
73.61.Ga
出版日期: 2005-08-01
:
73.20.Hb
(Impurity and defect levels; energy states of adsorbed species)
78.55.Et
(II-VI semiconductors)
73.61.Ga
(II-VI semiconductors)
引用本文:
XU Jin;ZHANG Zi-Yu;ZHANG Yang;LIN Bi-Xia;FU Zhu-Xi. Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films[J]. 中国物理快报, 2005, 22(8): 2031-2034.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I8/2031
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