Abnormal Alignment of Misfit Dislocations in
In0.52 Al0.48 As/Inx Ga1-x As/In0.52 AI0.48 As/InP Heterostructure
WU JU1,2 , LI Han-xuan1 , WANG Zhan-guo1
1 Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2 also Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080
Abnormal Alignment of Misfit Dislocations in
In0.52 Al0.48 As/Inx Ga1-x As/In0.52 AI0.48 As/InP Heterostructure
WU JU1,2 ;LI Han-xuan1 ;WANG Zhan-guo1
1 Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2 also Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080
关键词 ：
61.72.Ff ,
68.55.Jk
Abstract ： It was observed with transmission electron microscopy in the In0.52 Al0.48 As/Inx Ga1-x As/In0.52 AI0.48 As/InP heterostructure that misfit dislocation lines deviate from the <110> directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.
Key words ：
61.72.Ff
68.55.Jk
出版日期: 1998-01-01
:
61.72.Ff
(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
68.55.Jk
引用本文:
WU JU;LI Han-xuan;WANG Zhan-guo. Abnormal Alignment of Misfit Dislocations in
In0.52 Al0.48 As/Inx Ga1-x As/In0.52 AI0.48 As/InP Heterostructure
[J]. 中国物理快报, 1998, 15(1): 50-51.
0.52 Al0.48 As/Inx Ga1-x As/In0.52 AI0.48 As/InP Heterostructure
. Chin. Phys. Lett., 1998, 15(1): 50-51.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I1/50
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