Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures
LI An-ping, ZHANG Bo-rui, QIAO Yong-ping, QIN Guo-gang, MA Zhen-chang1 , ZONG Wan-hua1
Department of Physics, Peking University, Beijing 100871
1 The 13th Institute of the Ministry of Electronic Industry, Shijiazhuang 050051
Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures
LI An-ping;ZHANG Bo-rui;QIAO Yong-ping;QIN Guo-gang;MA Zhen-chang1 ;ZONG Wan-hua1
Department of Physics, Peking University, Beijing 100871
1 The 13th Institute of the Ministry of Electronic Industry, Shijiazhuang 050051
关键词 ：
78.60.Fi ,
78.66.Nk
Abstract ： We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO2 film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO2 film a new blue EL band with a peak at around 480nm was observed, and for the structure with a 300°C annealed Si-rich SiO2 film the red EL band shifts from 670 to 660nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.
Key words ：
78.60.Fi
78.66.Nk
出版日期: 1998-04-01
引用本文:
LI An-ping;ZHANG Bo-rui;QIAO Yong-ping;QIN Guo-gang;MA Zhen-chang;ZONG Wan-hua. Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures[J]. 中国物理快报, 1998, 15(4): 305-307.
2 Film/p-Si Structures. Chin. Phys. Lett., 1998, 15(4): 305-307.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I4/305
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1998, Vol. 15 
