| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Impact of Quantum Coherence on Inelastic Thermoelectric Devices: From Diode to Transistor |
| Bei Cao1, Chongze Han1, Xiang Hao1, Chen Wang2*, and Jincheng Lu1* |
1Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
2Department of Physics, Zhejiang Normal University, Jinhua 321004, China
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| Cite this article: |
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Bei Cao, Chongze Han, Xiang Hao et al 2024 Chin. Phys. Lett. 41 077302 |
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Abstract We present a study on inelastic thermoelectric devices, wherein charge currents and electronic and phononic heat currents are intricately interconnected. The employment of double quantum dots in conjunction with a phonon reservoir positions them as promising candidates for quantum thermoelectric diodes and transistors. We illustrate that quantum coherence yields significant charge and Seebeck rectification effects. It is worth noting that, while the thermal transistor effect is observable in the linear response regime, especially when phonon-assisted inelastic processes dominate the transport, quantum coherence does not enhance thermal amplification. Our work may provide valuable insights for the optimization of inelastic thermoelectric devices.
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Received: 06 March 2024
Published: 24 July 2024
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