| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Low-Voltage IGZO Field-Effect Ultraviolet Photodiode |
| Shuang Song1,3, Huili Liang1,2*, Wenxing Huo4, Guang Zhang5, Yonghui Zhang6, Jiwei Wang3, and Zengxia Mei1,2* |
1Songshan Lake Materials Laboratory, Dongguan 523808, China
2Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
3College of Physics, Liaoning University, Shenyang 110036, China
4Department of Instruments Science and Technology, School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
5National Key Laboratory of Scattering and Radiation, Beijing 100039, China
6School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China
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| Cite this article: |
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Shuang Song, Huili Liang, Wenxing Huo et al 2024 Chin. Phys. Lett. 41 068501 |
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Abstract In the era of Internet of Things (IoTs), an energy-efficient ultraviolet (UV) photodetector (PD) is highly desirable considering the massive usage scenarios such as environmental sterilization, fire alarm and corona discharge monitoring. So far, common self-powered UV PDs are mainly based on metal-semiconductor hetero-structures or p–n heterojunctions, where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity. In this work, an extremely low-voltage field-effect UV PD is proposed using a gate-drain shorted amorphous IGZO (a-IGZO) thin film transistor (TFT) architecture. A combined investigation of the experimental measurements and technology computer-aided design (TCAD) simulations suggests that the reverse current ($I_{\rm R}$) of field-effect diode (FED) is highly related with the threshold voltage ($V_{\rm th}$) of the parental TFT, implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current. Driven by a low bias of $-0.1$ V, decent UV response has been realized including large UV/visible ($R_{300}/R_{550}$) rejection ratio ($1.9\times 10^{3}$), low dark current ($1.15\times 10^{-12}$ A) as well as high photo-to-dark current ratio (PDCR, $\sim$ $10^{3}$) and responsivity (1.89 A/W). This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias, which is attractive for designs of large-scale smart sensor networks with high energy efficiency.
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Received: 02 April 2024
Published: 20 June 2024
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| PACS: |
85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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85.30.Tv
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(Field effect devices)
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61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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